A Single-Event Transient Radiation Hardened Low-Dropout Regulator for LC Voltage-Controlled Oscillator

被引：3

作者：

Chen, Xi ^{[1
,2
]}

Guo, Qiancheng ^{[1
]}

Yuan, Hengzhou ^{[1
]}

Guo, Yang ^{[1
]}

机构：

[1] Natl Univ Def Technol, Coll Comp Sci & Technol, Changsha 410073, Peoples R China

[2] Changsha Univ, Coll Elect Informat & Elect Engn, Changsha 410022, Peoples R China

来源：

SYMMETRY-BASEL | 2022年 / 14卷 / 04期

基金：

中国国家自然科学基金;

关键词：

radiation-hardened-by-design (RHBD); single-event transient (SET); voltage regulator; low-dropout regulator (LDO); voltage-controlled oscillator (VCO); SOFT-ERROR; TOLERANT; SET; SENSITIVITY; IMPACT; CLOCK; GHZ;

D O I：

10.3390/sym14040788

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes. In this paper, by conducting single-event transient (SET) sensitivity analysis of LDO in voltage-regulated VCO, we find the sensitive nodes of LDO in oscillation circuits located on the relevant transistors that determine the bias voltage of the tail transistor in the error amplifier (EA). To immunize SET, a symmetrical hardening method combining sensitive node splitting and resistive-decoupling is proposed for the sensitive nodes. This method achieves 80.8% analog single-event transient (ASET) mitigation. This study was conducted in 28-nm CMOS process.

引用

页数：14

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