A Moire method for high accuracy alignment in nanoimprint lithography

被引：35
|
作者：
Muehlberger, M.
Bergmair, I.
Schwinger, W.
Gmainer, M.
Schoeftner, R.
Glinsner, T.
Hasenfuss, Ch.
Hingerl, K.
Vogler, M.
Schmidt, H.
Kley, E. B.
机构：
[1] Profactor GmbH, A-4407 Steyr, Austria
[2] EV Grp, A-4782 St Florian Inn, Austria
[3] CD Lab Surface Opt, A-4040 Linz, Austria
[4] Micro Resist Technol GmbH, D-12555 Berlin, Germany
[5] Univ Jena, Inst Appl Phys, D-07743 Jena, Germany
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期
关键词：
nanoimprint lithography; alignment; Moire;
D O I：
10.1016/j.mee.2007.01.081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanoimprint lithography (NIL) is a cost efficient technique for the mass production of nanostructures. We demonstrate alignment accuracies in the range of 100 nm and below in UV-based nanoimprint lithography (UV-NIL) using a simple optical technique. The advantages of this technique are the relative simplicity of the marker-design and the whole setup combined with the possibility of an upgrade of existing equipment and still ultra-high precision alignment capabilities. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：925 / 927
页数：3
相关论文
共 50 条
  • [41] Material Development for High Throughput Nanoimprint Lithography
    Kobayashi, Kei
    Nakamura, Takayuki
    Kato, Hirokazu
    Hatano, Masayuki
    Tokue, Hiroshi
    Nakasugi, Tetsuro
    Choi, Eun Hyuk
    Jung, Wooyung
    Kono, Takuya
    NOVEL PATTERNING TECHNOLOGIES 2018, 2018, 10584
  • [42] NILCom® -: Commercialization of Nanoimprint Lithography -: Nanoimprint Lithography beyond semiconductor
    Luesebrink, H
    Glinsner, T
    Hangweier, P
    Nanofair 2005: New Ideas for Industry, 2005, 1920 : 287 - 292
  • [43] Gap-optimized Moire phase imaging alignment for proximity lithography
    Zhu, Jiangping
    Hu, Song
    You, Zhisheng
    Su, Xianyu
    OPTICAL ENGINEERING, 2015, 54 (01)
  • [44] Influence of Collimation on Alignment Accuracy in Proximity Lithography
    Wang, Nan
    Jiang, Wei
    Zhu, Jiangping
    Tang, Yan
    Yan, Wei
    Tong, Junmin
    Hu, Song
    IEEE PHOTONICS JOURNAL, 2014, 6 (04):
  • [45] Alignment of liquid crystals by topographically patterned polymer films prepared by nanoimprint lithography
    Yi, Youngwoo
    Nakata, Michi
    Martin, Alexander R.
    Clark, Noel A.
    APPLIED PHYSICS LETTERS, 2007, 90 (16)
  • [46] Application of advanced hybrid metrology method to Nanoimprint Lithography
    Osherov, Ilya
    Issacharoff, Limor
    Gedalia, Oram
    Wakamoto, Koichi
    Sendelbach, Matthew
    Asano, Masafumi
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXI, 2017, 10145
  • [47] Multilevel nanoimprint lithography with submicron alignment over 4 in. Si wafers
    Zhang, W
    Chou, SY
    APPLIED PHYSICS LETTERS, 2001, 79 (06) : 845 - 847
  • [48] Characterization of Alignment Strategy to Achieve a Reliable Alignment Accuracy in Advanced Lithography
    Ahmad, Normah
    Hashim, Uda
    Manaf, Mohd Jeffery
    Wahab, Kader Ibrahim Abdul
    JURNAL KEJURUTERAAN, 2007, 19 : 17 - 27
  • [49] Nanoimprint lithography for high-throughput fabrication of metasurfaces
    Dong Kyo Oh
    Taejun Lee
    Byoungsu Ko
    Trevon Badloe
    Jong G. Ok
    Junsuk Rho
    Frontiers of Optoelectronics, 2021, 14 : 229 - 251
  • [50] High order symmetry interference lithography based nanoimprint
    Letailleur, Alban A.
    Nomenyo, Komla
    Mc Murtry, Stefan
    Barthel, Etienne
    Sondergard, Elin
    Lerondel, Gilles
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (01)
12345