A Moire method for high accuracy alignment in nanoimprint lithography

被引：35
|
作者：
Muehlberger, M.
Bergmair, I.
Schwinger, W.
Gmainer, M.
Schoeftner, R.
Glinsner, T.
Hasenfuss, Ch.
Hingerl, K.
Vogler, M.
Schmidt, H.
Kley, E. B.
机构：
[1] Profactor GmbH, A-4407 Steyr, Austria
[2] EV Grp, A-4782 St Florian Inn, Austria
[3] CD Lab Surface Opt, A-4040 Linz, Austria
[4] Micro Resist Technol GmbH, D-12555 Berlin, Germany
[5] Univ Jena, Inst Appl Phys, D-07743 Jena, Germany
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期
关键词：
nanoimprint lithography; alignment; Moire;
D O I：
10.1016/j.mee.2007.01.081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanoimprint lithography (NIL) is a cost efficient technique for the mass production of nanostructures. We demonstrate alignment accuracies in the range of 100 nm and below in UV-based nanoimprint lithography (UV-NIL) using a simple optical technique. The advantages of this technique are the relative simplicity of the marker-design and the whole setup combined with the possibility of an upgrade of existing equipment and still ultra-high precision alignment capabilities. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：925 / 927
页数：3
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