Intrinsic carrier relaxation and the exciton lifetime in InAs/GaAs quantum dots

被引：0
|
作者：
Adler, F [1 ]
Geiger, M [1 ]
Bauknecht, A [1 ]
Scholz, F [1 ]
Schweizer, H [1 ]
机构：
[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 164卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199711)164:1<431::AID-PSSA431>3.0.CO;2-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) is investigated by photoluminescence spectroscopy (PL) at resonant excitation (below the GaAs and the wetting layer bandgap). Different relaxation paths are observed in the InAs/GaAs quantum dot system and allow to identify the hole relaxation in the SADs as multiphonon assisted tunneling. The PL decay time in the SADs after resonant excitation (about 600 ps) is attributed to the lifetime of the quantum dot exciton. In agreement with theoretical predictions, we find a constant lifetime of about 600 ps for temperatures below 50 K and a linear increase of the lifetime between 50 and 100 K with a slope of 26 ps/K.
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页码：431 / 436
页数：6
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