Study of the Physical Properties of Ge-S-Ga Glassy Alloy

被引:1
|
作者
Rana, Anjli [1 ]
Sharma, Raman [1 ]
机构
[1] Himachal Pradesh Univ, Dept Phys, Shimla 171005, India
关键词
BOND APPROACH;
D O I
10.1063/1.5032899
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the present work, we have studied the effect of Ga doping on the physical properties of Ge20S80-xGax glassy alloy. The basic physical parameters which have important role in determining the structure and strength of the material viz. average coordination number, lone-pair electrons, mean bond energy, glass transition temperature, electro negativity, probabilities for bond distribution and cohesive energy have been computed theoretically for Ge-S-Ga glassy alloy. Here, the glass transition temperature and mean bond energy have been investigated using the Tichy-Ticha approach. The cohesive energy has been calculated by using chemical bond approach (CBA) method. It has been found that while average coordination number increases, all the other parameters decrease with the increase in Ga content in Ge-S-Ga system.
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页数:4
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