Microstructure and thermoelectric properties of a ZrNi1.1Sn half-Heusler alloy

被引:45
|
作者
Chai, Yaw Wang [1 ]
Oniki, Toshinori [1 ]
Kimura, Yoshisato [1 ]
机构
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Mat Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
基金
日本科学技术振兴机构;
关键词
Half-Heusler alloy; Nanoprecipitate; Interface; Phase stability; Thermoelectric properties; PERFORMANCE BULK THERMOELECTRICS; BOUNDARY-SCATTERING; LARGE ENHANCEMENTS; P-TYPE; FIGURE; TINISN; MERIT; NANOCOMPOSITES; THERMOPOWER; TI;
D O I
10.1016/j.actamat.2014.11.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructure and thermoelectric properties of a ZrNi1.1Sn half-Heusler (HH) alloy have been investigated. The alloy was found to contain a high density of nanosized Heusler precipitates that appeared as platelets and discs. These Heusler nanoprecipitates were responsible for a large improvement of the Seebeck coefficient of the alloy at room temperature compared with the ZrNiSn, which contained no Heusler nanoprecipitates. However, the improvement reduced with increasing temperature due to the phase instability of the Heusler nanoprecipitates. Nevertheless, the reduction of the Seebeck coefficient could be stabilized after heating and cooling the alloy from beyond the precipitate dissolution temperature to below the phase decomposition temperature due to stabilization of the Heusler nanoprecipitates. The size of the stabilized precipitates was significantly reduced to <20 nm in diameter. A reduction in the electrical resistivity was observed and resulted in an overall improvement of the power factor to 20% higher than that of the ZrNiSn. Similarly, a reduction in the thermal conductivity was observed due to the reduction of the size and interprecipitate spacing, as well as the relatively larger length scale of the coherency strain field around the diffuse interface between the HH matrix and stabilized Heusler nanoprecipitates that enhanced phonon scattering. The dimensionless figure of merit ZT of the ZrNi1.1Sn was 0.75 at 900 K, which was an improvement of similar to 40% compared with that of the ZrNiSn. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:290 / 300
页数:11
相关论文
共 50 条
  • [31] Thermoelectric transport properties of (Ti1-cAlc)NiSn half-Heusler alloy
    Rabin, Daniel
    Kyratsi, Theodora
    Fuks, David
    Gelbstein, Yaniv
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (03) : 1566 - 1574
  • [32] Sn Doped FeNbSb Half-Heusler Compounds for Tuning Thermoelectric Performance
    Yue, Luo
    Zheng, Shuqi
    Cui, Wenlin
    Fang, Teng
    Wang, Lijun
    Bai, Pengpeng
    Chen, Liqiang
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (05) : 2862 - 2871
  • [33] Thermoelectric properties of p-type half-Heusler compound: Sn-doped ErNiSb
    Kawano, K.
    Kurosaki, K.
    Sekimoto, T.
    Muta, H.
    Yamanaka, S.
    PROCEEDINGS ICT 07: TWENTY-SIXTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 2008, : 272 - 274
  • [34] Thermoelectric Properties of Off-Stoichiometric Ti-Ni-Sn Half-Heusler Systems
    Hazama, Hirofumi
    Matsubara, Masato
    Asahi, Ryoji
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) : 1730 - 1734
  • [35] Thermoelectric Properties of Off-Stoichiometric Ti-Ni-Sn Half-Heusler Systems
    Hirofumi Hazama
    Masato Matsubara
    Ryoji Asahi
    Journal of Electronic Materials, 2012, 41 : 1730 - 1734
  • [36] Properties of the double half-heusler alloy ScNbNi2Sn2 with respect to structural, electronic, optical, and thermoelectric aspects
    Mekki, H.
    Baaziz, H.
    Charifi, Z.
    Ghellab, T.
    Genc, A. E.
    Ugur, S.
    Ugur, G.
    SOLID STATE COMMUNICATIONS, 2023, 363
  • [37] Rapid Microwave Synthesis and Sintering of ZrNiSn Half-Heusler Thermoelectric Alloy
    Lei Ying
    Li Yu
    Xu Lin
    Cheng Cheng
    Wang Meng
    Wan Rundong
    RARE METAL MATERIALS AND ENGINEERING, 2016, 45 (06) : 1565 - 1570
  • [38] Effects of Annealing on the Microstructure and Thermoelectric Properties of Half-Heusler MNiSn (M = Ti, Zr, Hf)
    Gitae Park
    Ho Seong Lee
    Seonghoon Yi
    Journal of Electronic Materials, 2022, 51 : 3485 - 3494
  • [39] High Temperature Thermoelectric Properties of Half-Heusler Compound PtYSb
    Li, Guanghe
    Kurosaki, Ken
    Ohishi, Yuji
    Muta, Hiroaki
    Yamanaka, Shinsuke
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [40] Effects of Annealing on the Microstructure and Thermoelectric Properties of Half-Heusler MNiSn (M = Ti, Zr, Hf)
    Park, Gitae
    Lee, Ho Seong
    Yi, Seonghoon
    JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (07) : 3485 - 3494