Hydrogen Sensing Characteristics of Pt Schottky Diodes on ((2)over-bar01) and (010) Ga2O3 Single Crystals

被引：24
|
作者：
Jang, Soohwan [1 ]
Jung, Sunwoo [1 ]
Kim, Jihyun [2 ]
Ren, Fan [3 ]
Pearton, Stephen J. [4 ]
Baik, Kwang Hyeon [5 ]
机构：
[1] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea
[2] Korea Univ, Dept Chem Engn, Seoul 02841, South Korea
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[5] Hongik Univ, Sch Mat Sci & Engn, Sejong 30016, South Korea
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
OXYGEN VACANCY; GALLIUM OXIDE; THIN-FILMS; ADSORPTION; BETA-GA2O3; SENSORS; SURFACE; ACTIVATION; DEVICES; WATER;
D O I：
10.1149/2.0261807jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the hydrogen sensing characteristics of Pt Schottky diodes on ((2) over bar 01) and (010) beta-Ga2O3 bulk crystals. The Pt Schottky diodes on beta-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the ((2) over bar 01) Ga2O3 diode sensor was as high as 7.86 x 10(7) (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both beta-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N-2, CO, CO2, O-2, CH4, NO2, and NH3. Our finding suggests that the Pt Schottky diodes on beta-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity. (C) The Author(s) 2018. Published by ECS.
引用
收藏
页码：Q3180 / Q3182
页数：3
相关论文
共 50 条
  • [21] Sensing mechanisms of Pt/β-Ga2O3/GaN hydrogen sensor diodes
    Lee, Ching-Ting
    Yan, Jheng-Tai
    SENSORS AND ACTUATORS B-CHEMICAL, 2010, 147 (02): : 723 - 729
  • [22] Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ((2)over-bar01) heterojunctions
    Sun, Shun-Ming
    Liu, Wen-Jun
    Golosov, Dmitriy Anatolyevich
    Gu, Chen-Jie
    Ding, Shi-Jin
    NANOSCALE RESEARCH LETTERS, 2019, 14 (01):
  • [23] Epitaxial growth of ((2)over-bar01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy
    Nikolaev, V. I.
    Pechnikov, A. I.
    Stepanov, S. I.
    Nikitina, I. P.
    Smirnov, A. N.
    Chikiryaka, A. V.
    Sharofidinov, S. S.
    Bougrov, V. E.
    Romanov, A. E.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 47 : 16 - 19
  • [24] Electrical characterization of ALD HfO2 high-k dielectrics on ((2)over-bar01) β-Ga2O3
    Shahin, David I.
    Tadjer, Marko J.
    Wheeler, Virginia D.
    Koehler, Andrew D.
    Anderson, Travis J.
    Eddy, Charles R., Jr.
    Christou, Aris
    APPLIED PHYSICS LETTERS, 2018, 112 (04)
  • [25] Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ((2)over-bar01) Heterojunctions
    Sun, Shun-Ming
    Liu, Wen-Jun
    Xiao, Yi-Fan
    Huan, Ya-Wei
    Liu, Hao
    Ding, Shi-Jin
    Zhang, David Wei
    NANOSCALE RESEARCH LETTERS, 2018, 13
  • [26] Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 ((2)over-bar01) MOSCAPs
    Zeng, Ke
    Jia, Ye
    Singisetti, Uttam
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (07) : 906 - 909
  • [27] Leakage Current by Poole-Frenkel Emission in Pt Schottky Contacts on ((2)over-bar01) β-Ga2O3 Grown by Edge-Defined Film-Fed Growth
    Zhou, Leidang
    Lu, Xing
    Chen, Liang
    Ouyang, Xiaoping
    Liu, Bo
    Xu, Jun
    Tang, Huili
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (07) : Q3054 - Q3057
  • [28] Origins of etch pits in β-Ga2O3(010) single crystals
    Hanada, Kenji
    Moribayashi, Tomoya
    Koshi, Kimiyoshi
    Sasaki, Kohei
    Kuramata, Akito
    Ueda, Osamu
    Kasu, Makoto
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [29] Band alignment of atomic layer deposited SiO2 and HfSiO4 with ((2)over-bar01) β-Ga2O3
    Carey, Patrick H.
    Ren, Fan
    Hays, David C.
    Gila, Brent P.
    Pearton, Stephen J.
    Jang, Soohwan
    Kuramata, Akito
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (07)
  • [30] Oxidized Metal Schottky Contacts on (010) β-Ga2O3
    Hou, Caixia
    Gazoni, Rodrigo M.
    Reeves, Roger J.
    Allen, Martin W.
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) : 337 - 340
12345