Hydrogen Sensing Characteristics of Pt Schottky Diodes on ((2)over-bar01) and (010) Ga2O3 Single Crystals

被引：24
|
作者：
Jang, Soohwan [1 ]
Jung, Sunwoo [1 ]
Kim, Jihyun [2 ]
Ren, Fan [3 ]
Pearton, Stephen J. [4 ]
Baik, Kwang Hyeon [5 ]
机构：
[1] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea
[2] Korea Univ, Dept Chem Engn, Seoul 02841, South Korea
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[5] Hongik Univ, Sch Mat Sci & Engn, Sejong 30016, South Korea
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
OXYGEN VACANCY; GALLIUM OXIDE; THIN-FILMS; ADSORPTION; BETA-GA2O3; SENSORS; SURFACE; ACTIVATION; DEVICES; WATER;
D O I：
10.1149/2.0261807jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the hydrogen sensing characteristics of Pt Schottky diodes on ((2) over bar 01) and (010) beta-Ga2O3 bulk crystals. The Pt Schottky diodes on beta-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the ((2) over bar 01) Ga2O3 diode sensor was as high as 7.86 x 10(7) (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both beta-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N-2, CO, CO2, O-2, CH4, NO2, and NH3. Our finding suggests that the Pt Schottky diodes on beta-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity. (C) The Author(s) 2018. Published by ECS.
引用
收藏
页码：Q3180 / Q3182
页数：3
相关论文
共 50 条
  • [1] Analysis of temperature dependent forward characteristics of Ni/((2)over-bar01) β-Ga2O3 Schottky diodes
    Jayawardena, Asanka
    Ahyi, Ayayi C.
    Dhar, Sarit
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (11)
  • [2] A Comparative Study on the Electrical Properties of Vertical ((2)over-bar01) and (010) β-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates
    Fu, Houqiang
    Chen, Hong
    Huang, Xuanqi
    Baranowski, Izak
    Montes, Jossue
    Yang, Tsung-Han
    Zhao, Yuji
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) : 3507 - 3513
  • [3] Tribological characteristics of bulk ((2)over-bar01) β-Ga2O3 substrate crystals grown by EFG
    Butenko, P. N.
    Boiko, M. E.
    Chikiryaka, A., V
    Guzilova, L., I
    Pozdnyakov, A. O.
    Sharkov, M. D.
    Almaev, A., V
    Nikolaev, V., I
    MATERIALS PHYSICS AND MECHANICS, 2023, 51 (06): : 153 - 162
  • [4] A comparative study of wet etching and contacts on ((2)over-bar01) and (010) oriented β-Ga2O3
    Jang, Soohwan
    Jung, Sunwoo
    Beers, Kimberly
    Yang, Jiancheng
    Ren, Fan
    Kuramata, A.
    Pearton, S. J.
    Baik, Kwang Hyeon
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 731 : 118 - 125
  • [5] Analytical electron microscopy of ((2)over-bar01) β-Ga2O3/SiO2 and ((2)over-bar01) β-Ga2O3/Al2O3 interface structures in MOS capacitors
    Klingshirn, Christopher J.
    Jayawardena, Asanka
    Dhar, Sarit
    Ramamurthy, Rahul P.
    Morisette, Dallas
    Zheleva, Tsvetanka
    Lelis, Aivars
    Salamanca-Riba, Lourdes G.
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (19)
  • [6] InGaN LEDs prepared on β-Ga2O3 ((2)over-bar01) substrates
    Iizuka, Kazuyuki
    Morishima, Yoshikatsu
    Kuramata, Akito
    Shen, Yu-Jiun
    Tsai, Chang-Yu
    Su, Ying-Yong
    Liu, Gavin
    Hsu, Ta-Cheng
    Yeh, J. H.
    GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, 9363
  • [7] The analysis of the etch pits parameters in the ((2)over-bar01) plane of the β-Ga2O3 substrate crystals
    Zarichny, A. A.
    Butenko, P. N.
    Boiko, M. E.
    Sharkov, M. D.
    Nikolaev, V. I.
    MATERIALS PHYSICS AND MECHANICS, 2023, 51 (03): : 46 - 51
  • [8] Inhomogeneous interface dipole effect at the Schottky junctions of PdCrO2 on β-Ga2O3 ((2)over-bar01) substrates
    Miyakawa, T.
    Harada, T.
    Ito, S.
    Tsukazaki, A.
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (02)
  • [9] Conduction mechanism in highly doped β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
    Oishi, Toshiyuki
    Harada, Kazuya
    Koga, Yuta
    Kasu, Makoto
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (03)
  • [10] Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3((2)over-bar01)-Al2O3-Si Substrate
    Wang, Yibo
    Xu, Wenhui
    Han, Genquan
    You, Tiangui
    Mu, Fengwen
    Hu, Haodong
    Liu, Yan
    Zhang, Xinchuang
    Huang, Hao
    Suga, Tadatomo
    Ou, Xin
    Ma, Xiaohua
    Hao, Yue
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (03)
12345