Modeling of SiO2 CVD from TEOS/ozone in a separate-gas-injection reactor

A mathematical model has been developed to study the chemical vapor deposition of SiO2 from TEOS and ozone in a cold-wall separate-gas-injection reactor related to the commercial Walkins-Johnson 7000. The model employs the kinetic scheme proposed previously by Kim and Gin Control-volume-based finite difference methods are used to solve for the two-dimensional fluid velocity, temperature, and concentration distributions. The model successfully describes experimental data of film thickness profiles available. We systematically investigate the dependence of deposition rate on operating conditions Including O-3/TEOS ratio, reactant now rate, and injector-wafer spacing. The predicted results indicate that a high TEOS now late and an O-3/TEOS ratio of around 30 are preferable for obtaining high deposition rates and good film quality.