Heterojunction Solar Cells with Nanostructured Silicon Thin Films Containing Yttrium Impurities

被引：0

作者：

Koval, V. M. ^{[1
]}

Yasievich, Y., V ^{[1
]}

Ivashchuk, A., V ^{[1
]}

Yakymenko, Y., I ^{[1
]}

Fadieiev, M. S. ^{[1
]}

Bushueva, O. O. ^{[1
]}

机构：

[1] NTUU Kyiv Polytech Inst, Dept Microelect, Kiev, Ukraine

来源：

2014 IEEE 34TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2014年

关键词：

nanostructured silicon; rare-earth metals; photovoltaic effect; solar cell;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterojunction solar cells based on nanostructured silicon thin films with yttrium impurities were obtained by electron-beam evaporation. The influence of yttrium dopants on electrical and photovoltaic properties of heterojunctions was determined. It was shown that the introduction of Y impurities in silicon thin films increases short circuit current of heterostructures by almost two times due to the gettering properties of rare-earth metals.

引用

页码：90 / 92

页数：3

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