Surface reconstructions of 6H-SiC(0001) and surface-structure-controlled epitaxial growth

被引：6
|
作者：
Kitabatake, M [1 ]
机构：
[1] Matsushita Elect Ind Co Ltd, Cent Res Labs, Kyoto 61902, Japan
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
surface reconstruction; epitaxial growth; step-flow growth; surface-structure-controlled epitaxy;
D O I：
10.4028/www.scientific.net/MSF.264-268.327
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface reconstructions of the 6H-SiC(0001) Si-face are investigated using reflective high energy electron diffraction. The root 3X root 3 and 3X3 reconstructions are observed with additional Si atoms on the surface. Thermally cleaned 6H-SiC(0001) root 3X root 3 surface change to 3X3 with ad-Si atoms at <900 degrees C. The 3X3 surface is not stable at >900 degrees C. Low-temperature step-flow growth is succeeded using the surface-structure-controlled epitaxy in which the 6H-SiC(0001) growth is proceeded keeping the;ad-Si-stabilized root 3X root 3 surface reconstruction.
引用
收藏
页码：327 / 330
页数：4
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