Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

被引：10
|
作者：
Breev, I. D. [1 ]
Anisimov, A. N. [1 ]
Wolfson, A. A. [1 ]
Kazarova, O. P. [1 ]
Mokhov, E. N. [2 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
AlN; sublimation sandwich method; Raman scattering; BULK CRYSTALS; GAN;
D O I：
10.1134/S1063782619110034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.
引用
收藏
页码：1558 / 1561
页数：4
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