Defect microstructure of thin wurtzite GaN films grown by MBE

被引：0

作者：

Sverdlov, BN ^{[1
]}

Botchkarev, A ^{[1
]}

Martin, GA ^{[1
]}

Salvador, A ^{[1
]}

Morkoc, H ^{[1
]}

Tsen, SCY ^{[1
]}

Smith, DJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：175 / 180

页数：6

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