Defect microstructure of thin wurtzite GaN films grown by MBE

被引：0
|
作者：
Sverdlov, BN [1 ]
Botchkarev, A [1 ]
Martin, GA [1 ]
Salvador, A [1 ]
Morkoc, H [1 ]
Tsen, SCY [1 ]
Smith, DJ [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：175 / 180
页数：6
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