Observation of persistent photoconductivity and modified permittivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures

被引：0

作者：

Mouneyrac, David ^{[1
,2
]}

Hartnett, John G. ^{[1
]}

Le Floch, Jean-Michel ^{[1
]}

Tobar, Michael E. ^{[1
]}

Krupka, Jerzy

Cros, Dominique ^{[2
]}

机构：

[1] Univ Western Australia, Sch Phys, Crawley, WA 6009, Australia

[2] Univ Limoges, CNRS, XLIM UMR 6172, UMR 6172, F-87060 Limoges, France

来源：

2009 JOINT MEETING OF THE EUROPEAN FREQUENCY AND TIME FORUM AND THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM, VOLS 1 AND 2 | 2009年

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1109/FREQ.2009.5168314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The whispering gallery modes have been used to characterize the effect of the light on gallium arsenide and gallium phosphide placed in darkness at 50K at frequencies respectively equal to 18.94GHz and 11.54GHz. The experiment shows a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity and the loss tangent of the semiconductor are modified by shifting of the free electrons from the valence band to the conduction band.

引用

页码：886 / +

页数：2

共 10 条

[1] Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method
Hartnett, John G.
Mouneyrac, David
Le Floch, Jean-Michel
Krupka, Jerzy
Tobar, Michael E.
Cros, D.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
[2] Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method
Hartnett, John G.
Mouneyrac, David
Le Floch, Jean-Michel
Krupka, Jerzy
Tobar, Michael E.
Cros, D.
APPLIED PHYSICS LETTERS, 2008, 93 (06)
[3] RESIDUAL PHOTOCONDUCTIVITY OF GALLIUM ARSENIDE AT VERY LOW TEMPERATURES
SYTENKO, TN
DMITRUK, NL
LYASHENK.VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1066 - &
[4] ELECTRON HEATING IN GALLIUM-ARSENIDE AND INDIUM PHOSPHIDE AT LOW-TEMPERATURES
EMELYANENKO, OV
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FIZIKA TVERDOGO TELA, 1973, 15 (06): : 1712 - 1717
[5] Use of whispering-gallery modes and quasi-TE0np modes for broadband characterization of bulk gallium arsenide and gallium phosphide samples
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[6] NOISE MODELS FOR GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS AT ROOM AND CRYOGENIC TEMPERATURES
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HA, TT
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[7] Observation of persistent electron capture in n-type gallium arsenide studied by optically detected magnetic resonance
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[8] Electrochemically modified semiconductor gallium arsenide electrodes for the argentometric titration of chlorides with silver nitrate in natural samples
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[9] Electrochemically modified semiconductor gallium arsenide electrodes for the argentometric titration of chlorides with silver nitrate in natural samples
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[10] GALLIUM-ARSENIDE E-MESFET AND D-MESFET DEVICE NOISE CHARACTERISTICS OPERATED AT CRYOGENIC TEMPERATURES WITH ULTRALOW DRAIN CURRENT
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