Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method

被引:6
|
作者
Hartnett, John G. [1 ]
Mouneyrac, David [1 ,2 ]
Le Floch, Jean-Michel [1 ]
Krupka, Jerzy [3 ]
Tobar, Michael E. [1 ]
Cros, D. [2 ]
机构
[1] Univ Western Australia, Sch Phys, Crawley, WA 6009, Australia
[2] Univ Limoges, CNRS, XLIM UMR 6172, F-87060 Limoges, France
[3] Warsaw Univ Technol, Inst Microelect & Optoelect, Dept Elect, PL-00662 Warsaw, Poland
基金
澳大利亚研究理事会;
关键词
D O I
10.1063/1.2969905
中图分类号
O59 [应用物理学];
学科分类号
摘要
Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes. (C) 2008 American Institute of Physics.
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页数:3
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