Planar Hall effect in epitaxial thin films of magnetite

被引：18
|
作者：
Bason, Y. [1 ]
Klein, L.
Wang, H. Q.
Hoffman, J.
Hong, X.
Henrich, V. E.
Ahn, C. H.
机构：
[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期
关键词：
D O I：
10.1063/1.2712053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We measured the planar Hall effect (PHE) of magnetite (Fe(3)O(4)) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications. (c) 2007 American Institute of Physics.
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