Effects of grain size and abrasive size of polyerystalline nano-particle ceria slurry on shallow trench isolation chemical mechanical polishing

被引:15
|
作者
Kang, HG
Katoh, T
Kim, SJ
Paik, U
Park, HS
Park, JG
机构
[1] Hanyang Univ, Nano SOI Proc Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Ceram Engn, Seoul 133791, South Korea
[3] Hynix Semicond Inc, Inchon, South Korea
关键词
CMP; shallow trench isolation; ceria; oxide film; grain size; secondary particle size; surfactant; nanotopography;
D O I
10.1143/JJAP.43.L365
中图分类号
O59 [应用物理学];
学科分类号
摘要
In a ceria slurry with an ionic surfactant, the grain size and particle size of the poly-crystalline abrasives were controlled independently by changing the calcination temperature and the mechanical milling time, respectively, during abrasive synthesis. A chemical mechanical polishing (CMP) experiment using the slurry showed that the oxide removal rate increased with both the grain size and the abrasive particle size, while the nitride removal rate was independent of both. On the other hand, examination of the nanotopography impact showed that the planarization efficiency increased with decreasing abrasive size but was independent of the grain size.
引用
收藏
页码:L365 / L368
页数:4
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