Determination of charge handling capability of a deep depletion charge coupled device based on a three-dimensional numerical simulation

被引：1

作者：

Kim, MH ^{[1
]}

机构：

[1] UNIV LEICESTER,DEPT ENGN,LEICESTER LE1 7RH,LEICS,ENGLAND

来源：

SOLID STATE SENSOR ARRAYS AND CCD CAMERAS | 1996年 / 2654卷

关键词：

buried-channel CCD; 3-D numerical device simulation; full-well capacity; charge transfer efficiency;

D O I：

10.1117/12.236123

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

引用

页码：51 / 62

页数：12

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