Determination of charge handling capability of a deep depletion charge coupled device based on a three-dimensional numerical simulation

被引：1
|
作者：
Kim, MH [1 ]
机构：
[1] UNIV LEICESTER,DEPT ENGN,LEICESTER LE1 7RH,LEICS,ENGLAND
来源：
SOLID STATE SENSOR ARRAYS AND CCD CAMERAS | 1996年 / 2654卷
关键词：
buried-channel CCD; 3-D numerical device simulation; full-well capacity; charge transfer efficiency;
D O I：
10.1117/12.236123
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
引用
收藏
页码：51 / 62
页数：12
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