Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

被引：8
|
作者：
Mokhtari, F. [1 ,2 ]
Bouabdallah, A. [1 ]
Merah, A. [3 ]
Zizi, M. [1 ]
Hanchi, S. [4 ]
Alemany, A. [5 ]
机构：
[1] Univ Sci & Technol, LTSE Lab, Algiers, Algeria
[2] Univ Mouloud Mammeri, Tizi Ouzou, Algeria
[3] Univ Mhammed Bougara, Boumerdes, Algeria
[4] UER Mecan, Algiers, Algeria
[5] CNRS, Lab EPM, Grenoble, France
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2010年 / 45卷 / 06期
关键词：
crystal growth; Czochralski; silicon; modified geometry; pressure field; Fluent software; MAGNETIC-FIELDS; MELT FLOW; SIMULATION; CONVECTION; TRANSPORT;
D O I：
10.1002/crat.201000033
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of three-dimensional computational simulations using the finite volume package Fluent in two different geometries, a new geometry as cylindro-spherical and the traditional configuration as cylindro-cylindrical. We found that the evolution of pressure which is has not been studied before; this important function is strongly related to the vorticity in the bulk flow, the free surface and the growth interface. It seems that the pressure is more sensitive to the breaking of symmetry than the other properties that characterize the crystal growth as temperature or velocity fields. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：573 / 582
页数：10
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