Sb-treatment effect of GaAs substrate on Sb-doped Cd1-xMnxTe growth by MOVPE

被引：1

作者：

Goto, Hideo ^{[1
]}

Tahashi, Masahiro ^{[1
]}

Ido, Toshiyuki ^{[1
]}

机构：

[1] Chubu Univ, Dept Elect Engn, Aichi 4878501, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 05期

关键词：

D O I：

10.1002/pssb.200675134

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Sb-doped Cd1-xMnxTe was successfully grown on (100)GaAs substrate by metal-organic vapor phase epitaxy under atmospheric pressure by Sb-treatment of the GaAs substrate prior to the growth. The Sb-treatment of GaAs substrate creates a GaSb layer on the GaAs substrate, which relaxes the lattice misfit between the GaAs substrate and the Sb-doped Cd1-xMnxTe. The best FWHM of (400) diffraction of Sb-doped Cd1-xMnxTe was 580 seconds, where the TESb supply rate of the Sb-treatment was 2.2 mu mol/min. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1691 / 1693

页数：3

共 22 条

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