Electronic transport properties of an (8,0) carbon/boron nitride nanotube heterojunction

被引:8
|
作者
Liu Hong-Xia [1 ]
Zhang He-Ming [1 ]
Song Jiu-Xu [1 ]
Zhang Zhi-Yong [2 ]
机构
[1] Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
[2] NW Univ Xian, Informat Sci & Technol Inst, Xian 710069, Peoples R China
关键词
nanotube heterojunction; nonequilibrium Green's function; transport properties;
D O I
10.1088/1674-1056/19/3/037104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The structure of a heterojunction made up of an (8, 0) carbon nanotube and an (8, 0) boron nitride nanotube is achieved through geometry optimization implemented in the CASTEP package. Based on the optimized geometry, the model of the heterojunction is established. Its transport properties are investigated by combining the nonequilibrium Green's function with density functional theory. Results show that both the lowest unoccupied molecular orbital and the highest occupied molecular orbital mainly locate on the carbon nanotube section. In the current-voltage characteristic of the heterojunction, a recti. cation feature is revealed.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Electronic properties and gas adsorption behaviour of pristine, silicon-, and boron-doped (8,0) single-walled carbon nanotube: A first principles study
    Azam, Mohd Asyadi
    Alias, Farizul Muiz
    Tack, Liew Weng
    Seman, Raja Noor Amalina Raja
    Taib, Mohamad Fariz Mohamad
    JOURNAL OF MOLECULAR GRAPHICS & MODELLING, 2017, 75 : 85 - 93
  • [32] Electronic and transport properties of carbon and boron-nitride ferrocene nanopeapods
    Zhang, Guiling
    Peng, Sun
    Shang, Yan
    Yang, Zhao-Di
    Zeng, Xiao Cheng
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (46) : 10017 - 10030
  • [33] Electronic transport properties of (7,0) semiconducting carbon nanotube
    Song Jiu-Xu
    Yang Yin-Tang
    Chai Chang-Chun
    Liu Hong-Xia
    Ding Rui-Xue
    CHINESE PHYSICS LETTERS, 2008, 25 (09) : 3212 - 3214
  • [34] A DFT study on carbon-doping at different sites of (8, 0) boron nitride nanotube
    Mehdi D. Esrafili
    Hadi Behzadi
    Structural Chemistry, 2013, 24 : 573 - 581
  • [35] The structure and electronic properties of carbon nanotube heterojunction
    Liu, H
    Chen, JW
    ACTA PHYSICA SINICA, 2003, 52 (03) : 664 - 667
  • [36] Comparison of electronic transport parameter of CNT(10,10)/CNT(17,0) and CNT(5,5)/CNT(8,0) carbon nanotube metal-semiconductor on-tube heterojunction
    Sukirno
    Bisri, Satria Zulkarnaen
    Irmelia
    Hasanah, Lilik
    Suryamas, Adi Bagus
    Usman, Ida
    Mursal
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 267 - +
  • [37] Optical and electronic properties of zigzag boron nitride nanotube (6,0): DFT study
    Sotudeh, Mina
    Boochani, Arash
    Parhizgar, Sara Sadat
    Masharian, Seyedeh Razieh
    INTERNATIONAL NANO LETTERS, 2020, 10 (04) : 293 - 301
  • [38] Optical and electronic properties of zigzag boron nitride nanotube (6,0): DFT study
    Mina Sotudeh
    Arash Boochani
    Sara Sadat Parhizgar
    Seyedeh Razieh Masharian
    International Nano Letters, 2020, 10 : 293 - 301
  • [39] Structural feature and electronic property of an (8, 0) carbon-silicon carbide nanotube heterojunction
    Key Lab of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
    Chin. Phys., 2009, 2 (734-737):
  • [40] Structural feature and electronic property of an (8, 0) carbon-silicon carbide nanotube heterojunction
    刘红霞
    张鹤鸣
    胡辉勇
    宋久旭
    Chinese Physics B, 2009, (02) : 734 - 737