THz intersubband dynamics in p-Si/SiGe quantum well emitter structures

被引：0

作者：

Pidgeon, CR ^{[1
]}

Murzyn, P

Wells, JPR

Konic, Z

Kelsall, RW

Harrison, P

Lynch, SA

Paul, AJ

Arnone, AD

Robbins, DJ

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[4] Toshiba Res Europe Ltd, Cambridge CB3 0HE, England

[5] Qinetiq, Malvern WR14 3PS, Worcs, England

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 237卷 / 01期

关键词：

D O I：

10.1002/pssb.200301784

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multiquantum well structures in the FIR regime, (h) over barw < (h) over barw(LO), utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and are in excellent agreement with our degenerate pump-probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement, we determine a decay time of similar to10 ps. In strong contrast to similar measurements on p-GaAs quantum wells, this is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

引用

页码：381 / 385

页数：5

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