High Dielectric Constant Sub - Nanometric Laminates of Binary Oxides for the Application in High-Density Capacitances

In recent years, laminates consisting of alternating layers of two binary oxides with layer thicknesses below 1 nm have attracted attention for their high dielectric constant values, reaching values of about 1000 in the case of Al2O3/TiO2 sub-nanometric laminates. This excellent dielectric performance ofthe sub-nanometric laminates relies on the Maxwell Wagner (MW) relaxation, exploiting the blocking of the mobile charge carriers of the semiconducting TiO2 at the interface with Al2O3. In this work, we explored the possibilities of enhancing the dielectric constant by MW relaxation in amorphous subnanometric laminates of Al2O3/ZnO. It was observed that the sublayer thickness and the interface of individual layers define the dielectric constant of laminates, and for further understanding, simulations and equivalent circuit analysis were conducted.