Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor deposition

被引：20

作者：

Huang, H. M. ^{[1
,2
]}

Ling, S. C. ^{[1
,2
]}

Chen, J. R. ^{[1
,2
]}

Ko, T. S. ^{[1
,2
]}

Li, J. C. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
,3
]}

Kuo, H. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[3] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Guiren Township 711, Tainan County, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 06期

关键词：

AlGaN; Metalorganic chemical vapor deposition; Non-polar; Al composition; BAND-GAP; ALGAN; EFFICIENT; SAPPHIRE; ENERGY;

D O I：

10.1016/j.jcrysgro.2009.12.064

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The non-polar a-plane AlxGa1-xN alloys on GaN epitaxial layer with different Al compositions (0 <= x <= 0.2) were grown on r-plane (1 (1) over bar 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the Al composition x were estimated from the X-ray diffraction measurements. According to the result of asymmetric X-ray reciprocal space mapping, AlGaN layer was coherently strained to the underlying GaN template. The a-plane AlGaN alloy with relatively lower Al composition showed a flat surface with reduction of pits. The best mean roughness of the surface morphology was 1.18 nm. The photoluminescence (PL) result revealed that the PL peak position shifted from 3.42 to 3.87 eV with 0 <= x <= 0.2. Apart from the shifted peak position with increasing Al content, the PL emission intensity and surface morphology of the a-plane AlGaN alloy with relatively low Al content show slightly better characteristics than that of the a-plane GaN and AlGaN with higher Al composition. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：869 / 873

页数：5

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