3.3kV 4H-SiC Semi-SJ MOSFET for Low OnResistance and Switching Loss

被引：0
|
作者：
Cheon, Jinhee [1 ]
Kim, Kwansoo [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul, South Korea
来源：
2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2020年
关键词：
SiC MOSFET; semi-superjunctiont; switching loss; input capacitance; on-resistance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, semi-superjunction MOSFET structure with improved electrical characteristic was proposed. Through TCAD simulation, static and dynamic characteristic of conventional and proposed structure were compared and analyzed. The semi-superjunction structure has superior static characteristic, partly by introducing superjunction, improving both breakdown voltage and on- resistance. Moreover, since input capacitance of semi-superjunction structure is the smallest, it has smaller switching energy loss and superior dynamic characteristics compared to conventional structure.
引用
收藏
页数：6
相关论文
共 50 条
  • [21] Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching
    He, Z.
    Torky, M.
    Ghandi, R.
    Hitchcock, C. W.
    Kennerly, S.
    Chow, T. P.
    2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 140 - 143
  • [22] 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance
    Melnyk, Kyrylo
    Renz, Arne Benjamin
    Cao, Qinze
    Gammon, Peter Michael
    Lophitis, Neophytos
    Maresca, Luca
    Irace, Andrea
    Nistor, Iulian
    Rahimo, Munaf
    Antoniou, Marina
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (09) : 5573 - 5580
  • [23] The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes
    Brosselard, P.
    Perez Tomas, A.
    Camara, N.
    Hassan, J.
    Jorda, X.
    Vellvehi, M.
    Godignon, P.
    Millan, J.
    Bergman, J. P.
    ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2008, : 237 - +
  • [24] 12-19kV 4H-SiC pin diodes with low power loss
    Sugawara, Y
    Takayama, D
    Asano, K
    Singh, R
    Palmour, J
    Hayashi, T
    ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, : 27 - 30
  • [25] A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout
    Lynch, Justin
    Mancini, Steve
    deBoer, Skylar
    Jang, Seung-Yup
    Morgan, Adam J.
    Lee, Bongmook
    Sung, Woongje
    2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 124 - 127
  • [26] A 13 kV 4H-SiC n-channel IGBT with Low Rdiff,on and Fast Switching
    Das, Mrinal K.
    Zhang, Qingchun
    Callanan, Robert
    Capell, Craig
    Clayton, Jack
    Donofrio, Matthew
    Haney, Sarah
    Husna, Fatima
    Jonas, Charlotte
    Richmond, James
    Sumakeris, Joseph J.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1183 - 1186
  • [27] Design and characterization of a novel dual-gate 3.3 kV 4H-SiC JFET
    Chevalier, F.
    Brosselard, P.
    Tournier, D.
    Grosset, G.
    Dupuy, L.
    Planson, D.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 938 - +
  • [28] 3.3 kV 4H-SiC JBS diodes with single-zone JTE termination
    Pan, Yan
    Tian, Liang
    Wu, Hao
    Li, Yongping
    Yang, Fei
    MICROELECTRONIC ENGINEERING, 2017, 181 : 10 - 15
  • [29] A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect
    Zhangl, Yourun
    Ou, Yanggang
    Luo, Jiamin
    Wang, Shuai
    Zhang, Bo
    Niu, Yingxi
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (07)
  • [30] Switching characteristics of 3kV 4H-SiC GTO thyristors
    Fedison, J.B.
    Chow, T.P.
    Agarwal, A.
    Ryu, S.
    Singh, R.
    Kordina, O.
    Palmour, J.
    2000, IEEE, Piscataway, NJ, United States
12345