A transparent conductive material, mostly transparent conductive oxide (TCO), is essential and indispensable for flexible electronics. Different from the conventional, single-layered TCO, multilayered oxide/metal/oxide (OMO) structures have been investigated as a promising alternative. The metal layer serves to reduce the electrical resistance of the oxides and the transparency is enhanced by suppressing the reflection from middle metal layer and substrate. Meanwhile, due to the limited temperature tolerance of the flexible polymeric substances, high -power impulse magnetron sputtering technique has been used to deposit the OMO structures at a substrate temperature lower than 70 & DEG;C. Two different OMO multilayered structures, including ZnO/Ag/ZnO and ZnO/Cu/ ZnO, are deposited on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET), and soda lime glass. The effects of layer thickness and metal type on the transmission and resistivity of the obtained OMO structures are investigated. The correlation between OMO structure characteristics and the resulting photo-electric properties are also studied. A 35-nm ZnO/20-nm Ag/30-nm ZnO having excellent resistivity of 6.2 x 10-5 omega cm (7.2 omega sq-1) and transmittance of 87.7% is demonstrated. Furthermore, after 3000 bending cycles, the multilayered OMOs on PET and PEN retain their superior electrical properties, exhibiting resistivity of 3.8 x 10-4 and 1.3 x 10-4 omega cm, respectively.
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Univ Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
Aissa, K. Ait
Semmar, N.
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Univ Orleans, CNRS, GREMI, UMR 7344, F-45067 Orleans 2, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
Semmar, N.
Achour, A.
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CNRS, LAAS, F-31077 Toulouse, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
Achour, A.
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Simon, Q.
Petit, A.
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Univ Orleans, CNRS, GREMI, UMR 7344, F-45067 Orleans 2, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
Petit, A.
Camus, J.
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Univ Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
Camus, J.
Boulmer-Leborgne, C.
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Univ Orleans, CNRS, GREMI, UMR 7344, F-45067 Orleans 2, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
Boulmer-Leborgne, C.
Djouadi, M. A.
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Univ Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, UMR 6502, 2 Rue Houssiniere BP 32229-44322, Nantes 3, France
机构:
Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Zheng, Bocong
Wu, Zhongzhen
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Wu, Zhongzhen
Cui, Suihan
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Cui, Suihan
Xiao, Shu
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Xiao, Shu
Liu, Liangliang
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Liu, Liangliang
Lin, Hai
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Lin, Hai
Fu, Ricky K. Y.
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City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong 999077, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Fu, Ricky K. Y.
Tian, Xiubo
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Tian, Xiubo
Pan, Feng
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Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
Pan, Feng
Chu, Paul K.
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City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong 999077, Peoples R ChinaPeking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
机构:
Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Appl Elect LLC, 97-10 Elizarov Str, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Oskirko, V. O.
Semenov, V. D.
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Tomsk State Univ Control Syst & Radioelect, 40 Lenin Ave, Tomsk 634050, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Semenov, V. D.
Solovyev, A. A.
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Solovyev, A. A.
Rabotkin, S., V
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Rabotkin, S., V
Pavlov, A. P.
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Appl Elect LLC, 97-10 Elizarov Str, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia
Pavlov, A. P.
Zakharov, A. N.
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Inst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, RussiaInst High Current Elect SB RAS, 2-3 Akad Skii Ave, Tomsk 634055, Russia