Fesixoy films prepared by co-sputtering

被引：0
|
作者：
Ehara, T [1 ]
Saito, M [1 ]
Naito, S [1 ]
Kokubun, Y [1 ]
机构：
[1] Ishinomaki Senshu Univ, Sch Sci & Engn, Ishinomaki, Miyagi 9868580, Japan
来源：
OPTOELECTRONIC MATERIALS AND TECHNOLOGY IN THE INFORMATION AGE | 2002年 / 126卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, preparation and properties of Iron-oxysilicide (FeSixOy) by reactive co-sputtering method will be described. Reactive sputtering by oxygen gas using Fe pellets placed on Si target produces Iron-oxysilicide thin films. The films showed an optical bandgap of 1.4 to 2.8 eV that is larger than that in beta-FeSi2, In the absorption spectra, localized states were observed. The optical properties observed were due to Fe atoms included in the films. In addition, the films displayed low enough conductivity to use as an insulating material. The results observed in the present work indicate that the Iron-oxysilicide films are preferable to use in beta-FeSi2 based devices as an insulating layer.
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页码：67 / 78
页数：12
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