Three-dimensional micro-optical switching system architecture using slab-waveguide-based micro-optical switches

被引:7
|
作者
Yoshimura, T [1 ]
Tsukada, S [1 ]
Kawakami, S [1 ]
Ninomiya, M [1 ]
Arai, Y [1 ]
Kurokawa, H [1 ]
Asama, K [1 ]
机构
[1] Tokyo Univ Technol, Dept Elect, Hachioji, Tokyo 1920982, Japan
关键词
three-dimensional optical switching system; optical switch; waveguide prism deflector; optical z connection; scalable film optical link multichip module; optoelectronic printed circuit board; photolithographic packaging; selectively occupied repeated transfer; optical interconnect;
D O I
10.1117/1.1532333
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A high-speed, large-scale architecture, three-dimensional micro-optical switching system (3-D MOSS) is proposed. A switching network is divided into subnetwork blocks, followed by stacking them to construct a multilayer structure. The interblock waveguide connection is replaced with short-distance vertical optical wiring, that is, optical z connections. Thus, 3D-MOSS, in contrast with conventional planar structures, reduces waveguide cross points, wiring length, and system size. Expected applications are switching for fiber communications, reconfigurable 3-D micro optoelectronic (OE) systems, and so on. 3D-MOSS consists of OE films, in which thin-film high-speed micro-optical switches are embedded. Two critical issues for 3D-MOSS, micro-optical switch and optical z connection, are investigated. The beam propagation method (BPM) calculation shows that waveguide-prism-deflector microoptical switch (WPD-MOS), in which prism-shaped electrodes are formed on an electro-optic slab waveguide, is suitable for the microoptical switch. The finite difference time domain method (FDTD)/BPM coupled simulation demonstrates a possibility of low-loss optical z-connection in a 4-mum width waveguide-based 3-D micro-optical network. Performance of 3D-MOSS for a 32 X 32 Banyan network is assessed as follows: system size is 2250 (length)x600 (width)x320 (height)mum(3), operation voltage 110 V, switching speed <1 mus, power consumption 520 mW at a switching rate of 3 x 10(5)/S, and maximum insertion loss 14 dB. This indicates the viability of 3D-MOSS from viewpoints of channel count, switching speed, thermal management, and power budget. A material/cost-saving device integration process "photolithographic packaging with selectively occupied repeated transfer (PL-Pack with SORT)" is briefly described as an example of a fabrication method for 3D-MOSS. (C) 2003 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:439 / 446
页数:8
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