The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

被引：1
|
作者：
Liu, Yan [1 ]
Lin, Zhaojun [1 ]
Zhao, Jingtao [1 ]
Yang, Ming [1 ]
Shi, Wenjing [1 ]
Lv, Yuanjie [2 ]
Feng, Zhihong [2 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 68卷 / 07期
基金：
中国国家自然科学基金;
关键词：
AlGaN/AlN/GaN heterostructure field-effect transistors; Polarization Coulomb field scattering; Two-dimensional electron gas electron mobility; GAN;
D O I：
10.3938/jkps.68.883
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen's law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.
引用
收藏
页码：883 / 888
页数：6
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