Characterization of a nano line width reference material based on metrological scanning electron microscope

被引:1
|
作者
Wang, Fang [1 ]
Shi, Yushu [1 ]
Li, Wei [1 ]
Deng, Xiao [2 ]
Cheng, Xinbin [2 ]
Zhang, Shu [1 ]
Yu, Xixi [1 ,3 ]
机构
[1] Natl Inst Metrol, Beijing 100029, Peoples R China
[2] Tongji Univ, Shanghai 200092, Peoples R China
[3] Shenzhen Inst Technol Innovat, Natl Inst Metrol, Shenzhen 518038, Peoples R China
关键词
critical dimension; line width; metrological scanning electron microscopy; traceability; MONTE-CARLO-SIMULATION; SURFACE RECONSTRUCTION; IMAGES;
D O I
10.1088/1674-1056/ac3225
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The line width (often synonymously used for critical dimension, CD) is a crucial parameter in integrated circuits. To accurately control CD values in manufacturing, a reasonable CD reference material is required to calibrate the corresponding instruments. We develop a new reference material with nominal CDs of 160 nm, 80 nm, and 40 nm. The line features are investigated based on the metrological scanning electron microscope which is developed by the National Institute of Metrology (NIM) in China. Also, we propose a new characterization method for the precise measurement of CD values. After filtering and leveling the intensity profiles, the line features are characterized by the combination model of the Gaussian and Lorentz functions. The left and right edges of CD are automatically extracted with the profile decomposition and k-means algorithm. Then the width of the two edges at the half intensity position is regarded as the standard CD value. Finally, the measurement results are evaluated in terms of the sample, instrument, algorithm, and repeatability. The experiments indicate efficiency of the proposed method which can be easily applied in practice to accurately characterize CDs.
引用
收藏
页数:9
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