6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers

被引：33

作者：

Wade, JK ^{[1
]}

Mawst, LJ

Botez, D

Nabiev, RF

Jansen, M

Morris, JA

机构：

[1] Univ Wisconsin, Reed Ctr Photon, Madison, WI 53706 USA

[2] Coherent Inc, Laser Grp, Santa Clara, CA 95056 USA

[3] LDX Optron Inc, Maryville, TN 37801 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at lambda=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In-0.5(Ga0.5Al0.5)(0.5)P laser structure have a threshold-current density, J(th), of 310 A/cm(2) and relatively high values for the characteristic temperatures of the threshold current, T-0 (135 K), and differential quantum efficiency, T-1 (900 K). Lasers with 10%/90% coatings and a 100-mu m-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 degrees C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, <(P)over bar (COMD)> is 17.4 MW/cm(2); that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers. (C) 1998 American institute of Physics.

引用

页码：4 / 6

页数：3

共 41 条

[21] High-power, high-brightness Al-free active region tapered lasers at 915 nm
Hassiaoui, I.
Michel, N.
Lecomte, M.
Parillaud, O.
Calligaro, M.
Krakowski, M.
SEMICONDUCTOR LASERS AND LASER DYNAMICS II, 2006, 6184
[22] High-power highly reliable Al-free 940-nm diode lasers
Erbert, G.
Beister, G.
Hülsewede, R.
Knauer, A.
Pittroff, W.
Sebastian, J.
Wenzel, H.
Weyers, M.
Tränkle, G.
IEEE Journal on Selected Topics in Quantum Electronics, 2001, 7 (02): : 143 - 148
[23] High-power highly reliable Al-free 940-nm diode lasers
Erbert, G
Beister, G
Hülsewede, R
Knauer, A
Pittroff, W
Sebastian, J
Wenzel, H
Weyers, M
Tränkle, G
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) : 143 - 148
[24] High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region
Gaimard, Quentin
Aubin, Guy
Merghem, Kamel
Krakowski, Michel
Parillaud, Olivier
Barbay, Sylvain
Ramdane, Abderrahim
IEEE PHOTONICS JOURNAL, 2019, 11 (01):
[25] High power and high brightness laser diode structures at 980nm using an Al-free active region.
Auzanneau, SC
Krakowski, M
Berlie, F
Calligaro, M
Robert, Y
Parillaud, O
Lecomte, M
Boulant, B
Fillardet, T
NOVEL IN-PLANE SEMICONDUCTOR LASERS II, 2003, 4995 : 184 - 195
[26] Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm
Michel, N.
Calligaro, M.
Lecomte, A.
Parillaud, O.
Krakowski, M.
Tijero, J. M. G.
Odriozola, H.
Esquivias, I.
NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, 2008, 6909
[27] Aluminum-free-active-region diode laser achieves 8.8-W CW record at 805 nm
不详
LASER FOCUS WORLD, 1998, 34 (08): : 9 - 9
[28] High power 940 nm Al-free active region laser diodes and bars with a broad waveguide
Fang, Gaozhan
Xiao, Jianwei
Ma, Xiaoyu
Xu, Zuntu
Zhang, Jinming
Tan, Manqing
Liu, Zongshun
Liu, Suping
Feng, Xiaoming
Chinese Journal of Lasers B (English Edition), 2002, 11 (01): : 9 - 13
[29] High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
FANG Gaozhan XIAO Jianwei MA Xiaoyu XU Zuntu ZHANG Jinming TAN Manqing LIU Zongshun LIU Suping FENG Xiaoming (Institute of Semiconductors
Chinese Journal of Lasers, 2002, (01) : 10 - 14
[30] Design of High-Brightness Tapered Lasers at 1060 nm Based on an Asymmetric Al-free Active Region Structure
Odriozola, H.
Tijero, J. M. G.
Esquivias, I.
Borruel, L.
Martin-Minguez, A.
Michel, N.
Calligaro, M.
Lecomte, M.
Parillaud, O.
Krakowski, M.
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, 2008, : 787 - +

← 1 2 3 4 5 →