Quantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD

被引：0
|
作者：
Lee, JS [1 ]
Ahn, KH [1 ]
Jeong, YH [1 ]
机构：
[1] POHANG UNIV SCI & TECHNOL,MICROWAVE APPLICAT RES CTR,POHANG 790600,SOUTH KOREA
来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Quantum Hall effect devices based on delta-doped Al0.25Ga0.75In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) are sucessfully fabricated. A high electron mobility of 7200 cm(2)/V . s with a sheet carrier density of 2.0 x 10(12)cm(-2) has been achieved at room temperature. The temperature coefficient of product sensitivity is -0.1%/K. The minimum detectable magnetic field (B-min) of 3 mu T at 1 Hz is achieved due to the high electron mobility.
引用
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页码：887 / 892
页数：6
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