Growth of Sr2CrReO6 epitaxial thin films by pulsed laser deposition

被引：15

作者：

Orna, J. ^{[1
,2
]}

Morellon, L. ^{[1
,2
]}

Algarabel, P. A. ^{[2
]}

Pardo, J. A. ^{[3
]}

Magen, C. ^{[4
]}

Varela, M. ^{[4
]}

Pennycook, S. J. ^{[4
]}

De Teresa, J. M. ^{[2
]}

Ibarra, M. R. ^{[1
,2
]}

机构：

[1] Univ Zaragoza, Inst Nanociencia Aragon, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain

[2] Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain

[3] Univ Zaragoza, Inst Nanociencia Aragon, Dept Ciencia & Tecnol Mat & Fluidos, Zaragoza 50018, Spain

[4] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2010年 / 322卷 / 9-12期

关键词：

Epitaxial thin film; Laser ablation; Spintronics; HIGH-CURIE-TEMPERATURE; DOUBLE-PEROVSKITE; TRANSPORT-PROPERTIES;

D O I：

10.1016/j.jmmm.2009.04.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth, structural, magnetic, and electrical transport properties of epitaxial Sr2CrReO6 thin films. We have succeeded in depositing films with a high crystallinity and a relatively large cationic order in a narrow window of growth parameters. The epitaxy relationship is Sr2CrReO6 (SCRO) (001) [100]parallel to SrTiO3 (STO) (001) [110] as determined by high-resolution X-ray diffraction and scanning transmission electron microscopy (STEM). Typical values of saturation magnetization of M-S (300K) = 1 mu(B)/f. u. and rho (300K) = 2.8 m Omega cm have been obtained in good agreement with previous published results in sputtered epitaxial thin films. We estimate that the antisite defects concentration in our thin films is of the order of 14%, and the measured Curie temperature is T-C=481(2) K. We believe these materials be of interest as electrodes in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1217 / 1220

页数：4

共 50 条

[31] Epitaxial growth of Cu2ZnSnS4 thin films by pulsed laser deposition
Sekiguchi, K.
Tanaka, K.
Moriya, K.
Uchiki, H.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8, 2006, 3 (08): : 2618 - +
[32] On the epitaxial growth of PZT films by pulsed laser deposition
Hamedi, LH
Guilloux-Viry, M
Perrin, A
Cherkani, MH
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1998, 23 (1-2): : 377 - 380
[33] Growth of epitaxial GaN films by pulsed laser deposition
Vispute, RD
Talyansky, V
Sharma, RP
Choopun, S
Downes, M
Venkatesan, T
Jones, KA
Iliadis, AA
Khan, MA
Yang, JW
APPLIED PHYSICS LETTERS, 1997, 71 (01) : 102 - 104
[34] The epitaxial growth and optical properties of ZnS thin films, deposited by pulsed laser deposition
Chung, J-K
Kim, W-J
Kim, S. S.
Song, T. K.
Park, S-Y
Lee, T. K.
Kim, C. J.
PHYSICA SCRIPTA, 2010, T139
[35] Impact of uniaxial strain on the electronic and magnetic properties of Sr2CrReO6
Nazir, S.
Qurat-Ul-Ain
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 847
[36] Epitaxial growth of CuScO2 thin films on sapphire a -plane substrates by pulsed laser deposition
Kakehi, Y. (kakehi@tri.pref.osaka.jp), 1600, American Institute of Physics Inc. (97):
[37] Magnetoelasticity driven magnetic anisotropy changes in strained Sr2CrReO6
Komelj, Matej
PHYSICAL REVIEW B, 2010, 82 (01):
[38] Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates
Liu, XH
Chen, XY
Yin, J
Liu, ZG
Liu, JM
Yin, XB
Chen, GX
Wang, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (02): : 391 - 393
[39] Epitaxial growth of GaN thin films using a hybrid Pulsed Laser Deposition system
Mérel, P
Chaker, M
Pépin, H
Tabbal, M
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 401 - 405
[40] Epitaxial growth of dielectric SrTiO3 thin films by pulsed laser deposition
Yu, T
Chen, YF
Liu, ZG
Ming, NB
Wu, XS
APPLIED SURFACE SCIENCE, 1999, 138 : 605 - 608

← 1 2 3 4 5 →