Free-standing p-Type SWCNT/MXene composite films with low thermal conductivity and enhanced thermoelectric performance

被引:37
|
作者
Wei, Jiacheng [1 ,2 ]
Wu, Dianlun [1 ]
Liu, Chunfa [1 ]
Zhong, Fei [1 ]
Cao, Guibin [3 ]
Li, Benzhang [1 ,3 ]
Gao, Chunmei [3 ]
Wang, Lei [1 ,2 ]
机构
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Key Lab Polymer Sci & Technol, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China
[3] Shenzhen Univ, Coll Chem & Environm Engn, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
Single-walled carbon nanotube (SWCNT); MXene; P-type thermoelectric composite; Thermal conductivity; WALLED CARBON NANOTUBES; ELECTRICAL-CONDUCTIVITY; POLYMER; CARBIDES;
D O I
10.1016/j.cej.2022.135706
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Single-walled carbon nanotubes (SWCNTs) show great potential as flexible thermoelectric (TE) materials, however, the low Seebeck coefficients and high thermal conductivities restrict their applications in this field. In this work, taking the advantages of one-dimensional (1D) SWCNTs and two-dimensional (2D) MXenes, a series of three-dimensional (3D) hollow structured SWCNT/MXene films had been prepared for the first time as potent p Type TE materials. First, compared to that of SWCNTs, the Seebeck coefficients of the composites can be increased due to energy-filtering effect at the SWCNT/MXene interfaces. Holes in the SWCNTs were compensated by electrons from MXenes, leading to a decreased hole concentration, which can also increase the Seebeck coefficients. Second, 3D hollow structures were formed in the composite films, which can decrease the thermal conductivity significantly. Third, contact junctions between SWCNTs and MXenes were formed in the composites, which were beneficial for electron transfer. As a result, at MXene loading of 10 wt%, SWCNT/MXene-10 displayed the highest TE performance. The Seebeck coefficient and ZT value is about 2 times and 20 times higher than that of the neat SWCNTs, respectively. At last, a TE device consists of 10 SWCNT/MXene-10 legs was prepared with a maximum output power of 1.54 mu W at temperature difference of 117.3 K. This work provides a facile strategy in designing of SWCNT-based TE materials with high performances.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Thermoelectric p-Type Ag9GaTe6 with an Intrinsically Low Lattice Thermal Conductivity
    Lin, Siqi
    Li, Wen
    Bu, Zhonglin
    Shan, Bing
    Pei, Yanzhong
    ACS APPLIED ENERGY MATERIALS, 2020, 3 (02) : 1892 - 1898
  • [22] Effects of thickness on flexibility and thermoelectric performance of free-standing Ag2Se films
    Park, Woomin
    Park, Seungbeom
    Mun, Yeongjun
    Lee, Dongchan
    Jang, Kwang-Suk
    JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2023, 121 : 142 - 148
  • [23] A Free-Standing α-MoO3/MXene Composite Anode for High-Performance Lithium Storage
    Guo, Zihan
    Wang, Dong
    Wang, Zhiwei
    Gao, Yanfang
    Liu, Jinrong
    NANOMATERIALS, 2022, 12 (09)
  • [24] A p-type multi-wall carbon nanotube/Te nanorod composite with enhanced thermoelectric performance
    Park, Dabin
    Ju, Hyun
    Oh, Taeseob
    Kim, Jooheon
    RSC ADVANCES, 2018, 8 (16) : 8739 - 8746
  • [25] Thermal conductivity of free-standing CVD diamond films by growing on both nuclear and growth sides
    Dai, Bing
    Zhao, Jiwen
    Ralchenko, Victor
    Khomich, Andrey
    Popovich, Alexey
    Liu, Kang
    Shu, Guoyang
    Gao, Ge
    Sun Mingqi
    Yang, Lei
    Lei, Pei
    Han, Jiecai
    Zhu, Jiaqi
    DIAMOND AND RELATED MATERIALS, 2017, 76 : 9 - 13
  • [26] Effects of reduction methods on the structure and thermal conductivity of free-standing reduced graphene oxide films
    Jin, Shuangling
    Gao, Qian
    Zeng, Xiangying
    Zhang, Rui
    Liu, Kejia
    Shao, Xia
    Jin, Minglin
    DIAMOND AND RELATED MATERIALS, 2015, 58 : 54 - 61
  • [27] Characterization of N-Type and P-Type GaN Layers Grown on Free-Standing GaN Substrates
    Suda, Jun
    Horita, Masahiro
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [28] Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping
    Li, Jiaran
    Xu, Jingtao
    Wang, Hongxiang
    Liu, Guo-Qiang
    Tan, Xiaojian
    Shao, Hezhu
    Hu, Haoyang
    Jiang, Jun
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (21) : 18727 - 18732
  • [29] Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping
    Jiaran Li
    Jingtao Xu
    Hongxiang Wang
    Guo-Qiang Liu
    Xiaojian Tan
    Hezhu Shao
    Haoyang Hu
    Jun Jiang
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 18727 - 18732
  • [30] Free-standing porous Manganese dioxide/graphene composite films for high performance supercapacitors
    Guo, Wang-Huan
    Liu, Teng-Jiao
    Jiang, Peng
    Zhang, Zhan-Jun
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2015, 437 : 304 - 310