Single oscillator model of undoped and co-doped ZnO thin films

被引：10
|
作者：
Petkova, P. [1 ]
Nedelchev, L. [2 ]
Nazarova, D. [2 ]
Boubaker, K. [3 ]
Mimouni, R. [4 ]
Vasilev, P. [1 ]
Alexieva, G. [5 ]
Bachvarova, D. [1 ]
机构：
[1] Konstantin Preslavsky Univ Shumen, Fac Nat Sci, Shumen, Bulgaria
[2] Bulgarian Acad Sci, Inst Opt Mat & Technol Acad Jordan Malinovski, Sofia, Bulgaria
[3] Univ Tunis, ESSTT, Mahdia, Tunisia
[4] Univ Tunis, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis, Tunisia
[5] Sofia Univ St Kliment Ohridski, Fac Phys, Solid State Phys & Microelect Dept, James Boucher 5, Sofia 1164, Bulgaria
来源：
OPTIK | 2017年 / 139卷
关键词：
Co-doped ZnO thin films; Single oscillator model; Refractive index; Experimental Lorentz profiles; OPTICAL-PROPERTIES;
D O I：
10.1016/j.ijleo.2017.03.089
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Undoped and co-doped zinc oxide thin films were deposited on glass substrates using a chemical spray technique. The experimental Lorentz profiles of co-doped ZnO thin films were measured in the spectral region 720-1750 nm. A single oscillator model of the resulted materials is constructed by calculation of: zero-frequency refractive index (n(o)), average interband oscillator wavelength (lambda(o)), oscillator strength (S-o), dispersion energy (E-d), single effective oscillator energy (E-o), plasma oscillation frequency (omega(p)) and interband transition strength moments (M-1, M-3). (C) 2017 Elsevier GmbH. All rights reserved.
引用
收藏
页码：217 / 221
页数：5
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