Negative differential resistance of InGaAs quantum wire FET

被引：0

作者：

Sugaya, T ^{[1
]}

Kim, SJ ^{[1
]}

Sugiyama, Y ^{[1
]}

Ogura, M ^{[1
]}

机构：

[1] Japan Sci & Technol Corp JST, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative differential resistance (NDR) with high peak to valley ratio (PVR) and low onset voltage (V-NDR) are clearly observed in a quantum-wire field-effect transistor (QWR-FET) with the channel width of 100nm, while it is not observed in a QWR-FET with the channel width of 300nm. The saturation characteristics of Landau plots indicate that the 100nm-width QWR has one-dimensional characteristics of electron transport, contrary to the 300nm-width QWR has two-dimensional electrons.

引用

页码：565 / 568

页数：4

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