Effect of Mg/Zn RF Power Ratio and Substrate Temperature on Optical and Structural Properties of RF Co-Sputtered MgxZn1-XO Alloy Thin Films

被引：0

作者：

Chetia, S. K. ^{[1
,2
]}

Ajimsha, R. S. ^{[1
]}

Das, Amit K. ^{[1
]}

Misra, P. ^{[1
,2
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Oxide Nanoelect Lab, Laser Mat Proc Div, Indore 452013, India

[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400085, Maharashtra, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2019 | 2020年 / 2265卷

关键词：

D O I：

10.1063/5.0017596

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the growth of MgZnO thin films on Si (100) substrates using rf co-sputtering technique. It is found that structural and optical properties of MgZnO thin films highly depend on Mg/Zn rf power ratio and substrate temperature. We observe an increase in band gap of MgZnO thin films from 3.3 eV to 5.9 eV with increasing Mg/Zn rf power ratio from 0 to 2.22 at 400 degrees C substrate temperature. Whereas, XRD studies show a structural phase transition of MgZnO films from hexagonal wurtzite via mixed phase region of both wurtzite and cubic phases to cubic phase with increase in Mg/Zn rf power ratio. As the substrate temperature increases from 400 degrees C to 700 degrees C, the MgZnO films in the mixed phase region shows single cubic phase.

引用

页数：4

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