Time-of-flight measurements in Langmuir-Blodgett films of poly(3-hexylthiophene)

被引：0

作者：

Osterbacka, R ^{[1
]}

Juska, G ^{[1
]}

Arlauskas, K ^{[1
]}

Stubb, H ^{[1
]}

机构：

[1] Abo Akad Univ, Dept Phys, FIN-20500 Turku, Finland

来源：

OPTICAL PROBES OF CONJUGATED POLYMERS | 1997年 / 3145卷

关键词：

Langmuir-Blodgett films; poly(3-hexylthiophene); time-of-flight; transit time; mobility; space-charge limited current;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Time-of-Flight (TOF) measurements in the voltage mode in thin films of poly(3-hexylthiophene) (PHT) have been studied. Thin films of PHT were fabricated using Langmuir-Blodgett (LB) technique giving unique possibility of controlling the thickness of sandwich type samples. We have used a method developed for the study of subnanosecond transients in thin films of amorphous semiconductors [G. Juska, G. Jukonis and J. Kocka, "Study of a-Si:H drift mobility in subnanosecond time scale", J Non-Cryst. Sol., 114, pp. 354-356 (1989)]. The TOF signals have been measured in LB films for the first time, and a hole mobility of the order of 8x10(-3) cm(2)/Vs in PHT LB films has been estimated.

引用

页码：389 / 394

页数：6

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