INFLUENCE OF DC AND AC MAGNETIC FIELDS ON MELT MOTION IN FZ LARGE Si CRYSTAL GROWTH

被引：0

作者：

Lacis, K. ^{[1
]}

Muiznieks, A. ^{[1
]}

Rudevics, A. ^{[1
]}

Sabanskis, A. ^{[1
]}

机构：

[1] Latvian State Univ, Fac Math & Phys, LV-1002 Riga, Latvia

来源：

MAGNETOHYDRODYNAMICS | 2010年 / 46卷 / 02期

关键词：

FLOATING-ZONE GROWTH; SINGLE-CRYSTALS; SILICON GROWTH; SEGREGATION; SIMULATION; FLOW;

D O I：

暂无

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

3D unsteady numerical simulation of the melt motion in floating zone (FZ) large Si single crystal growth process is performed. A system for the growth of 100 mm crystals is considered. Applications of a vertical direct current (DC) magnetic field and a rotating alternating current (AC) magnetic field are considered and compared to a reference case without additional magnetic fields. For all cases the velocity fields i n molten silicon are analyzed. The influence of melt motion on the distribution of normalized resistivity in the grown crystal is discussed.

引用

页码：199 / 218

页数：20

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