INFLUENCE OF DC AND AC MAGNETIC FIELDS ON MELT MOTION IN FZ LARGE Si CRYSTAL GROWTH

被引：0
|
作者：
Lacis, K. [1 ]
Muiznieks, A. [1 ]
Rudevics, A. [1 ]
Sabanskis, A. [1 ]
机构：
[1] Latvian State Univ, Fac Math & Phys, LV-1002 Riga, Latvia
来源：
MAGNETOHYDRODYNAMICS | 2010年 / 46卷 / 02期
关键词：
FLOATING-ZONE GROWTH; SINGLE-CRYSTALS; SILICON GROWTH; SEGREGATION; SIMULATION; FLOW;
D O I：
暂无
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
3D unsteady numerical simulation of the melt motion in floating zone (FZ) large Si single crystal growth process is performed. A system for the growth of 100 mm crystals is considered. Applications of a vertical direct current (DC) magnetic field and a rotating alternating current (AC) magnetic field are considered and compared to a reference case without additional magnetic fields. For all cases the velocity fields i n molten silicon are analyzed. The influence of melt motion on the distribution of normalized resistivity in the grown crystal is discussed.
引用
收藏
页码：199 / 218
页数：20
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