Defect formation mechanism of bulk SiC

被引：25

作者：

Sasaki, M ^{[1
]}

Nishio, Y

Nishino, S

Nakashima, S

Harima, H

机构：

[1] Kyoto Inst Technol, Fac Engn & Design, Kyoto 606, Japan

[2] Osaka Univ, Dept Appl Phys, Suita, Osaka 565, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

sublimation; micropipe; planar defect;

D O I：

10.4028/www.scientific.net/MSF.264-268.41

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

There are two kinds of defects, planar defects and vertical defects which are called micropipes in SiC bulk crystals grown by the sublimation method. We could decrease these defects by adding a little piece of Si to the SiC powder or using a Ta cylinder in the crucible. We report the dependence of these defects in a wafer on the silicon/carbon ratio. It is important to control the chemical species on the substrate.

引用

页码：41 / 44

页数：4

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