Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance

被引：85

作者：

Kanai, S. ^{[1
,2
]}

Matsukura, F. ^{[1
,2
,3
]}

Ohno, H. ^{[1
,2
,3
,4
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, WPI AIMR, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Aoba Ku, 468-1 Aramaki Aza Aoba, Sendai, Miyagi 9800845, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 19期

关键词：

ROOM-TEMPERATURE; ATOMIC LAYERS;

D O I：

10.1063/1.4948763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show the electric-field induced magnetization switching for CoFeB/MgO magnetic tunnel junctions with thick MgO barrier layer of 2.8 nm, whose resistance-area product is 176 k Omega mu m(2), and achieve the small switching energy of 6.3 fJ/bit. The increase of the junction resistance is expected to suppress the energy consumption due to the Joule heating during the switching; however, the energy is still dominated by the Joule energy rather than the charging energy. This is because the junction resistance decreases more rapidly for junctions with thicker MgO as bias voltage increases. Published by AIP Publishing.

引用

页数：3

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