Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA

被引：5
|
作者：
Cochran, Donna J. [1 ]
Buchner, Stephen P. [4 ]
Chen, Dakai [1 ]
Kim, Hak S. [1 ]
LaBel, Kenneth A. [3 ]
Oldham, Timothy R. [2 ]
Campola, Michael J. [1 ]
O'Bryan, Martha V. [1 ]
Ladbury, Raymond L.
Marshall, Cheryl [3 ]
Sanders, Anthony B. [3 ]
Xapsos, Michael A.
机构：
[1] NASA, Goddard Space Flight Ctr, MEI Technol Inc, Code 561-4,Bldg 22,Rm 062A, Greenbelt, MD 20771 USA
[2] NASA, Goddard Space Flight Ctr, Dell Perot Syst Govt Serv Inc, Greenbelt, MD 20771 USA
[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[4] Global Def Technol & Syst, San Francisco, CA USA
来源：
2009 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2009年
关键词：
Displacement Damage; Optoelectronics; Proton Damage; Single Event Effects; Total Ionizing Dose;
D O I：
10.1109/REDW.2009.5336318
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
引用
收藏
页码：25 / +
页数：2
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