Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA

被引：5

作者：

Cochran, Donna J. ^{[1
]}

Buchner, Stephen P. ^{[4
]}

Chen, Dakai ^{[1
]}

Kim, Hak S. ^{[1
]}

LaBel, Kenneth A. ^{[3
]}

Oldham, Timothy R. ^{[2
]}

Campola, Michael J. ^{[1
]}

O'Bryan, Martha V. ^{[1
]}

Ladbury, Raymond L.

Marshall, Cheryl ^{[3
]}

Sanders, Anthony B. ^{[3
]}

Xapsos, Michael A.

机构：

[1] NASA, Goddard Space Flight Ctr, MEI Technol Inc, Code 561-4,Bldg 22,Rm 062A, Greenbelt, MD 20771 USA

[2] NASA, Goddard Space Flight Ctr, Dell Perot Syst Govt Serv Inc, Greenbelt, MD 20771 USA

[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[4] Global Def Technol & Syst, San Francisco, CA USA

来源：

2009 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2009年

关键词：

Displacement Damage; Optoelectronics; Proton Damage; Single Event Effects; Total Ionizing Dose;

D O I：

10.1109/REDW.2009.5336318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

引用

页码：25 / +

页数：2

共 50 条

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