(Ga,Mn)As layers with perpendicular anisotropy: a study of magnetic domain patterns

被引：4
|
作者：
Dourlat, A. [1 ]
Gourdon, C. [1 ]
Jeudy, V.
Testelin, C. [1 ]
Thevenard, L. [2 ]
Lemaitre, A. [2 ]
机构：
[1] Univ Paris 07, Univ Paris 06, CNRS, UMR 7588,Inst Nanosci Paris, 140 Rue Lourmel, F-75015 Paris, France
[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12 | 2006年 / 3卷 / 12期
关键词：
D O I：
10.1002/pssc.200672821
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The magnetic domain pattern in (Ga,Mn)As layers with perpendicular magnetic easy-axis is studied by Kerr microscopy at various temperatures. We investigate the effect of post-growth annealing. As-grown samples exhibit a strongly anisotropic domain growth with dendritic-like expansion of domains along the < 110 > directions. For annealed samples, the density of nucleation centers is decreased and domain wall propagation is more isotropic. Two kinds of pinning centers are observed in annealed samples: line-like defects that strongly hinder domain wall propagation and point-like defects with a density of a few 10(5) cm(-2).
引用
收藏
页码：4074 / 4077
页数：4
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