Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

被引：45
|
作者：
Luna, E. [1 ]
Satpati, B. [1 ]
Rodriguez, J. B. [2 ]
Baranov, A. N. [2 ]
Tournie, E. [2 ]
Trampert, A. [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] Univ Montpellier 2, CNRS, UMR 5214, IES,CC 067, F-34095 Montpellier 5, France
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期
关键词：
gallium compounds; III-V semiconductors; indium compounds; interface structure; molecular beam epitaxial growth; semiconductor growth; semiconductor superlattices; transmission electron microscopy; SURFACE SEGREGATION; GASB; INAS; MICROSCOPY; ASYMMETRY; ALSB;
D O I：
10.1063/1.3291666
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g(002) two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
    Xu, Zhicheng
    Chen, Jianxin
    Wang, Fangfang
    Zhou, Yi
    Jin, Chuan
    He, Li
    JOURNAL OF CRYSTAL GROWTH, 2014, 386 : 220 - 225
  • [22] Strain relaxation process of (InAs)m(GaAs)n strained short-period superlattices grown by molecular beam epitaxy
    Kawai, Takahiro
    Yonezu, Hiroo
    Saito, Daishiro
    Yokozeki, Mikihiro
    Pak, Kangsa
    1600, JJAP, Minato-ku, Japan (33):
  • [23] (INAS)(1)/(GAAS)(4) SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    LEWIS, JH
    SPENCER, MG
    GRIFFIN, JA
    ZHANG, DP
    GRUNTHANER, F
    GEORGE, T
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 167 - 172
  • [24] Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy
    Yao, Jinshan
    Pan, Rui
    Wang, Wenyang
    Li, Chen
    Chen, Baile
    Lu, Hong
    Chen, Yan-Feng
    APPLIED PHYSICS LETTERS, 2021, 118 (25)
  • [25] OPTICAL AND STRUCTURAL INVESTIGATIONS OF INTERMIXING REACTIONS AT THE INTERFACES OF INAS/ALSB AND INAS/GASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    SCHMITZ, J
    WAGNER, J
    FUCHS, F
    HERRES, N
    KOIDL, P
    RALSTON, JD
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 858 - 862
  • [26] Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices
    Magri, R
    Zunger, A
    PHYSICAL REVIEW B, 2002, 65 (16): : 1653021 - 16530218
  • [27] GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy
    Tang Bao
    Xu Ying-Qiang
    Zhou Zhi-Qiang
    Hao Rui-Ting
    Wang Guo-Wei
    Ren Zheng-Wei
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2009, 26 (02)
  • [28] Growth of short-period InAs/GaSb superlattices
    Haugan, H.J.
    Mahalingam, K.
    Brown, G.J.
    Mitchel, W.C.
    Ullrich, B.
    Grazulis, L.
    Elhamri, S.
    Wickett, J.C.
    Stokes, D.W.
    Journal of Applied Physics, 2006, 100 (12):
  • [29] Growth of short-period InAs/GaSb superlattices
    Haugan, H. J.
    Mahalingam, K.
    Brown, G. J.
    Mitchel, W. C.
    Ullrich, B.
    Grazulis, L.
    Elhamri, S.
    Wickett, J. C.
    Stokes, D. W.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
  • [30] Intrinsic optical anisotropy of [001]-grown short-period InAs/GaSb superlattices
    Li, L. L.
    Xu, W.
    Peeters, F. M.
    PHYSICAL REVIEW B, 2010, 82 (23):
12345