Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

被引：45

作者：

Luna, E. ^{[1
]}

Satpati, B. ^{[1
]}

Rodriguez, J. B. ^{[2
]}

Baranov, A. N. ^{[2
]}

Tournie, E. ^{[2
]}

Trampert, A. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Montpellier 2, CNRS, UMR 5214, IES,CC 067, F-34095 Montpellier 5, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

关键词：

gallium compounds; III-V semiconductors; indium compounds; interface structure; molecular beam epitaxial growth; semiconductor growth; semiconductor superlattices; transmission electron microscopy; SURFACE SEGREGATION; GASB; INAS; MICROSCOPY; ASYMMETRY; ALSB;

D O I：

10.1063/1.3291666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g(002) two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.

引用

页数：3

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