Effects of annealing on charge in HfO2 gate stacks

被引：23

作者：

Zhang, Z ^{[1
]}

Li, M ^{[1
]}

Campbell, SA ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 01期

关键词：

annealing; charge; gate dielectric; HfO2; high-kappa; metal gate electrode; work function;

D O I：

10.1109/LED.2004.840016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a systematic investigation of charge in HfO2 gate stacks. Assuming that the majority of charge is associated with the stack interfaces, it is found that the charge at the HfO2/interfacial layer (IL) interface is negative while the charge at the SOL interface is positive. In general, the calculated charge densities at both interfaces are of order 10(12) cm(-2). A forming gas anneal (FGA) reduces the interface charge greatly at both interfaces. However, the FGA temperature does not have much effect on the charge density. The effects of post deposition anneal at various temperatures and under various atmospheres are also studied. Its found that a high temperature dilute oxidizing atmosphere anneal reduces the charge at both interfaces.

引用

页码：20 / 22

页数：3

共 50 条

[31] Multilayered ALD HfAlOx and HfO2 for High-Quality Gate Stacks
Bhuyian, Md Nasir Uddin
Misra, Durgamadhab
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2015, 15 (02) : 229 - 235
[32] Influence of AIN layers on the interface stability of HfO2 gate dielectric stacks
Agustin, Melody P.
Alshareef, Husam
Quevedo-Lopez, Manuel A.
Stemmer, Susanne
APPLIED PHYSICS LETTERS, 2006, 89 (04)
[33] Evaluation of NBTI in HfO2 gate-dielectric stacks with tungsten gates
Zafar, S
Lee, YH
Stathis, J
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (03) : 153 - 155
[34] A comprehensive model for breakdown mechanism in HfO2 high-κ gate stacks
Ranjan, R
Pey, KL
Tung, CH
Tang, LJ
Groeseneken, G
Bera, LK
De Gendt, S
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 725 - 728
[35] Germanium out diffusion in SiGe-based HfO2 gate stacks
Martinez, Eugenie
Nolot, Emmanuel
Barnes, Jean-Paul
Mazel, Yann
Bernier, Nicolas
Muthinti, Raja
Jagannathan, Hemanth
Lee, Choonghyun
Gambacorti, Narciso
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (04):
[36] CHARACTERIZING THE INTERFACIAL PROPERTIES OF HfO2/Si AND HfSiO/Si GATE STACKS
Tan, S. Y.
Wu, Ming-Yuan
Chen, Hsing-Hung
Hsia, Yi-Lun
EPD CONGRESS 2009, PROCEEDINGS, 2009, : 153 - +
[37] Interface states in HFO2 stacks with metal gate:: Nature, passivation, generation
Garros, X
Reimbold, G
Duret, D
Leroux, C
Guillaumot, B
Louveau, O
Hobbs, C
Martin, F
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 55 - 60
[38] Spatial distributions of trapping centers in HfO2/SiO2 gate stacks
Heh, D
Young, CD
Brown, GA
Hung, PY
Diebold, A
Bersuker, G
Vogel, EM
Bernstein, JB
APPLIED PHYSICS LETTERS, 2006, 88 (15)
[39] Annealing-induced interfacial reactions between gate electrodes and HfO2/Si gate stacks studied by synchrotron -: Radiation photoemission spectroscopy
Takahashi, H.
Okabayashi, J.
Toyoda, S.
Kumigashira, H.
Oshima, M.
Ikeda, K.
Liu, G. L.
Liu, Z.
Usuda, K.
SYNCHROTRON RADIATION INSTRUMENTATION, PTS 1 AND 2, 2007, 879 : 1569 - +
[40] Effects of annealing of HfSixOy/HfO2 high-k gate oxides temperature on the characteristics
Kim, HD
Roh, Y
Lee, Y
Lee, JE
Jung, D
Lee, NE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1347 - 1350

← 1 2 3 4 5 →